Abstract
The thermal modeling of a press pack insulated gate bipolar transistor (PP-IGBT) is crucial for device reliability estimation and operation management. However, the traditional finite element model (FEM) cannot simulate the temperature of a PP-IGBT device in real time, resulting in lifetime evaluation delays and errors. Therefore, this article proposes a thermal twin (TT) modeling method of a PP-IGBT based on power loss. First, common PP-IGBT TT modeling based on the reduced-order model (ROM) technology is introduced, and an optimized PP-IGBT TT modeling method based on power loss is proposed and compared with the common TT modeling method. Second, the electro-thermal coupling PP-IGBT FEM is determined, and the optimized PP-IGBT TT and a digital interface based on FEM simulation results are established and analyzed. Finally, the digital twin (DT) interaction system of the PP-IGBT is established, and the accuracy of the proposed TT model is verified via infrared experiments. The results reveal that the proposed PP-IGBT TT realizes the real-time and comprehensive mapping of the device temperature, and has great applicability potential in temperature monitoring and reliability evaluation.
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