Abstract
A numerical analysis of the residual voltage on an electrophotographic plate is presented for a photodischarge process characterized by carrier trapping and release parameters. The physical model is described by a set of one-dimensional transport equations with appropriate initial and boundary conditions. Examples of calculations are given for two models involving one and two hole trap levels. It is shown that a residual voltage can be derived which is valid for the decay process in amorphous Se film under typical electrophotographic conditions. For one trapping level, a trapping parameter of w<0.1 and a release parameter of r>10-5 are needed to decrease the residual voltage Vr. With two trapping levels, the residual voltage is mainly influenced by the deep trap Et1.
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