Abstract
Photon stimulated current measurements have been performed on red mercuric iodide single crystals in order to determine the trap energy, trap density, and capture cross section for different trapping levels that may be present in the platelet-shaped single crystals of red mercuric iodide grown by polymer controlled growth technique in vapor phase. The procedure of analysis of these measurements is outlined in brief. The analysis has shown that these crystals in general possess four trapping levels: two electron trapping levels with energies 0.10 and 0.31 eV and two hole trapping levels with energies 0.15 and 0.59 eV. The analysis has further shown that the total trap density is only of the order of 1013/cm3, indicating the superiority of this growth technique over other techniques. The analysis has also shown that all four trapping levels are of retrapping type. Finally, the possible mechanisms of formation of these trapping levels and the ways in which these trapping levels will influence the detector operation at room temperature are discussed.
Published Version
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