Abstract
In this paper, I have tried to analyze the electrical properties and the experimental data related to drain current–drain voltage of the Zn 0.7 Mg 0.3 O / ZnO / Zn 0.7 Mg 0.3 O heterojunction field effect transistor by use of Hoffman nonideal model theoretically. Also by use of different scattering mechanisms in two-dimensional electron gas structures, I have studied the electrical transport properties of this structure and most important effective parameters for controlling electron mobility in the range of 75 to 300 K have been studied theoretically.
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Schedule a callMore From: Modern physics letters. B, Condensed matter physics, statistical physics, applied physics
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