Abstract
A setup was designed based on the 3-ω method to study the effect of strain on the thermal conductivity of thin films deposited on a substrate. Mathematical parameters such as the applied strain on the films, dimensions of the setup, and the loading displacement were derived. Based on the setup, the test system was built and the influence of air on the results of the 3-ω method in a nonvacuum environment was analyzed. To verify the test system, we deposited a SiO2 thin film of 487 nm on a substrate and measured its thermal conductivity at 289.7 K under different strains. The results indicated that the thermal conductivity decreases from 1.07 W/(m K) at zero strain to 0.92 W/(m K) at about 0.14% tensile strain.
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