Abstract
A test structure and method for two-dimensional analysis of fabrication process variation of MOSFET using a photoemission microscope are presented. Arrays of 20×10 (=200) MOSFETs were successfully measured at a time and evaluated the fluctuation of their characteristics. The fluctuation of hot-carrier-induced photoemission intensity was larger as gate length becomes smaller. Although the intensity fluctuation of photoemission in the same MOSFET was within small range, the fluctuation all over the MOSFET array was relatively large and independent of the position in the array. An estimation method of the gate length.fluctuation has been demonstrated with the photoemission intensity distribution analysis.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
