A Temperature-Aware Framework on gm /ID -Based Methodology Using 180 nm SOI From −40 °C to 200 °C

Joao Roberto Raposo De Oliveira Martins,Ali Mostafa,Francisco De Oliveira Alves,Pietro Maris Ferreira,Jerome Juillard,Rachid Hamani

doi:10.1109/ojcas.2021.3067377

Abstract

The advent of the Internet-of-Things brings new challenges in circuit design. The presence of circuits and sensors in harsh environments brought the need for methodologies that account for them. Since the beginning of the transistors, the temperature is known for having a significant impact on performance, and even though very low temperature sensitivity circuits have been proposed, no general methodology for designing them exists. This paper proposes a gm over Id technique for designing temperature-aware circuits that can be used either on measurement data, analytically, or based on simulation models. This model is validated using measurements up to 200°C of X-FAB XT018 transistors and later with a circuit design example.

Highlights

W ITH the challenge of connecting people and circuits, Internet-of-Things (IoT) introduces new power decisions in autonomous electronics in consumer products
Even though recent papers presented very low temperature sensitivity, the presented methods are mostly dependent on the zero temperature coefficient bias point (ZTC) operation point of a unique transistor or additional control circuitry
Η is the threshold slope and ifgz the inversion coefficient at the IDSZTC point. Even though those ZTC points exist, their bias condition relies on mobility temperature dependency, which depends on several scattering effects including ballistic ones in new technologies [25]

Summary

INTRODUCTION

W ITH the challenge of connecting people and circuits, Internet-of-Things (IoT) introduces new power decisions in autonomous electronics in consumer products. Even though recent papers presented very low temperature sensitivity, the presented methods are mostly dependent on the ZTC operation point of a unique transistor or additional control circuitry This design choice intrinsically increases consumption and production cost which could be prohibitive in new low-power IoT devices. Η is the threshold slope and ifgz the inversion coefficient at the IDSZTC point Even though those ZTC points exist, their bias condition relies on mobility temperature dependency, which depends on several scattering effects including ballistic ones in new technologies [25]. For this reason, modeling the temperature dependency is a challenging task. The validation is done using the factory temperature validated BSIM model from −40 ◦C to 175 ◦C and measurement data from 27 ◦C to 200 ◦C

GATE TRANSCONDUCTANCE RATIO

CIRCUIT DESIGN EXAMPLE

CONCLUSION