Abstract
Abstract LPCVD WSi 2. x layers deposited on GaAs substrates and annealed between 800°C and 1000°C consist of polycrystalline WSi 2 with some amorphous Si. On annealing, Si migrates to the interface to form a thin epitaxial Si layer on the GaAs, thus separating the WSi layer from its substrate. The increase in the annealing temperature is accompanied by a rapid increase in the grain size of WSi 2 , an increase in the thickness of the epitaxial Si layer and a decrease in the Si/W ratio in the silicide.
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