A technique to incorporate both tensile and compressive channel stress in Ge FinFET architecture

Abstract

In this work, a germanium (Ge) fin-shaped field-effect transistor (FinFET) with silicon–germanium (SiGe) embedded source/drain architecture has been studied and the role of SiGe stressor material volume on induced channel stress has been investigated thoroughly for different stressor lengths/volumes inside the constant source/drain region. A 15-nm-long stressor from channel source/drain interface into the 50-nm-long source/drain region has been found to induce maximum compressive stress in the channel. This helps to improve the p-channel device performance and complete filling of source/drain region by the same SiGe incorporate tensile channel stress which improves the n-channel device performance. The nature and amount of induced channel stress have been found to depend on the relative volume of the channel, source/drain and SiGe stressor regions. A significant improvement is observed in the transconductance of the device over the drain current $$({g}_{\mathrm {m}}/{I}_{\mathrm {d}})$$ ratio for higher channel stress, indicating better performance of amplifier using uni-axially strained channel Ge FinFET.