A TCAD Framework for Assessing NBTI Impact Under Drain Bias and Self-Heating Effects in Replacement Metal Gate (RMG) p-FinFETs

Abstract

Sentaurus TCAD is enabled to calculate interface trap generation (ΔN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">IT</sub> ) during Negative Bias Temperature Instability (NBTI) under drain bias (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> ) and self-heating (SH) effects. The setup is calibrated with pure NBTI (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> =0V) experimental data, and is further used to determine the NBTI component during Hot Carrier Degradation (HCD) stress. Such decomposition of NBTI and HCD is demonstrated for multiple fin length (FL) p-FinFETs to model HCD experimental data at different V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> /V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> stress.