Abstract
GaAs Schottky diodes are analyzed as upper-mm-wave or THz direct-detectors in passive imaging arrays. Standard models are used for the current–voltage curve and small-signal responsivity with an assumed ideality factor of 1.2. The 1/ f and burst noise properties are adopted from available empirical data, and a small-signal circuit model is used to compute the power delivered by the antenna to the diode. For a 4 sq μm diode area and typical modulation frequencies up to about 100 Hz, the noise-equivalent power (NEP) is found to be limited primarily by the 1/ f and burst noise to values above ∼1 × 10 −10 W/Hz 1/2. If the modulation frequency could be increased to ∼1 MHz or above, or if the 1/ f and burst noise mechanism could be greatly reduced, the analysis predicts that the Schottky NEP would drop to ∼3 × 10 −12 W/Hz 1/2 at room temperature. At video sampling rates (30 s −1), the corresponding noise-equivalent delta temperature (NEΔT) would fall in the range 1–10 K depending on the RF bandwidth.
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