Abstract
True predictive models of plasma etching or deposition processes are rare today, due to the complexity of such processes, and the continuous change of plasma equipment. Modeling efforts concentrate only on part of the whole problem, e.g. on the plasma physics, or on topography evolution. The modeling approach reviewed here first analyses the plasma in modules, such as the plasma physics, the plasma chemistry, and the surface chemistry, and then attempts their synthesis into a complete plasma simulator with predictive capabilities. The interactions among modules are taken into account, and iterative solution procedures show that the complete simulator quickly converges to a consistent solution, which shows substantial differences with the solution obtained without any interactions. The complete plasma simulator is applied for rf plasmas in CF4, and CH4, used respectively for the etching of Si and the deposition of Diamond-Like Carbon. Predictions of neutral densities and etching/deposition rates compare successfully with experimental data.
Published Version
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