Abstract

AbstractA polarity‐dependent model of electron/hole traps on a free GaN:Si surface is suggested, accounting for both intrinsic and impurity‐induced surface states. The model parameters are fitted to provide the best agreement with available observations. The suggested approach is invoked to explain a recently observed non‐monotonic dependence of the surface barrier due to band bending upon the donor concentration in the GaN bulk. The model is used for analysis of DC performance of high‐electron mobility transistors (HEMTs) with different cap layer design. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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