Abstract
AlGaN/GaN power high electron mobility transistor (HEMT) performance is limited by current collapse and off-state gate and drain leakage current. A series of studies to improve these properties through optimized surface cleaning, as well as the implementation of novel materials, such as AlN and nanocrystalline diamond, is presented. Reduced leakage currents, degradation of dynamic ON-resistance, and current collapse ratio quantify improvement in HEMT performance. DC I-V measurements, pulsed I-V measurements, and a boost converter test circuit is used to validate these properties.
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