A surface potential based subthreshold drain current model for short-channel MOS transistors

Abstract

Utilizing the concept of the splitting of the quasi-Fermi energy on the surface, a surface potential based subthreshold drain current model for the short-channel MOS transistor is presented. Both the drift and diffusion components are considered in this model. The model is based on an accurate surface potential model that takes into account the varying depth of the channel depletion layer around the source and drain junction which is very important for short-channel devices. The model predictions are compared with the predictions by the 2D numerical device simulator DESSIS, and a very good agreement is obtained.