Abstract

We report a simple and efficient silicon wet etchant HNA (Hydrofluoric acid, Nitric acid, Acetic acid) for the stiction free release of silicon nitride/metal micro/nanomechanical structures. The HNA concentration was varied with the aim of developing a slow etch rate, which could be utilized to suspend the micron and sub-micron cantilever and fixed beam structures. The etch rate was found to decrease with decrease in HF and increase in HNO 3 concentrations. Smooth surface and high selectivity are obtained in case of high HNO 3 content. The obtained etchant with a slow etch rate of 440 nm/minute was successfully utilized for the release of silicon nitride cantilevers and fixed beam structures of 500 nm, 2 µm and 5 µm widths with varying lengths. The resonance frequency of suspended cantilevers characterized by Laser Doppler Vibrometer is in close agreement with the COMSOL simulated resonating frequencies proving that the etching process has been precise without changes to cantilever dimensions. In addition, the generated etchant was successfully used in releasing chrome/gold nanobeams as well without any damage to the metal layers.

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