Abstract
A new design for a multi-terminal superconducting transistor-like device exploiting tunnellinginjection of quasiparticles is proposed, in which parasitic back-action of the acceptor junction (S1IS2) bias current on theinjector junction (S2FIS3) current–voltage characteristic (CVC) is dramatically reduced as compared with that forthe formerly reported quiteron (here S, I, and F denote a superconductor, aninsulator and a ferromagnetic material). Improvement of the isolation is achievedowing to the short electron mean free path and short coherence length ina thin F layer that screens the superconducting energy gap in the perturbedS2 layer preventing its manifestation in the CVC of the injector.
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