Abstract
It is reported that 0.1- mu m T-gate InAlAs-InGaAs-InP HEMTs have exhibited state-of-the-art noise and gain performance well up to 100 GHz. Minimum noise figures of 0.8 and 1.2 dB with gains of 8.9 and 7.2 dB have been measured at 60 and 94 GHz, respectively. A high-performance W-band three-stage amplifier has been built using these devices with noise figures between 3.2-3.5 dB and a gain of 17.5+or-0.4 dB from 91 to 96 GHz. A 6-dB improvement in the 1-dB compression characteristic of the amplifier had been achieved with a GaAs pseudomorphic HEMT in the third stage.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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