A Subthreshold Swing Model for Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile

Abstract

A compact subthreshold swing model is proposed for the short-channel fully-depleted (FD) silicon-on-insulator (SOI) metal–oxide–semiconductor field effect transistors (MOSFETs) with vertical Gaussian doping profile in this paper. Considering the channel potential which is influenced by the non-uniform doping profile, the model is derived by using the concept of effective conduction path effect (ECPE). The validity of the proposed model is shown by comparing the calculated results with the Sentaurus technology computer-aided design (TCAD) numerical simulation data. The model is believed to provide a better physical insight and understanding of FD SOI MOSFETs with a non-uniform doping profile operating in the subthreshold regime.