A compact subthreshold swing model of ultra-thin body ultra-thin box SOI MOSFETs with Gaussian doping profile

Abstract

A two-dimensional (2D) physics-based compact subthreshold swing model is proposed for the ultra-thin body ultra-thin box SOI MOSFETs with a vertical Gaussian doping profile. Based on the channel potential which is influenced by the non-uniform doping profile, the subthreshold swing model is derived by using the concept of effective conduction path effect (ECPE). The outputs of the model show good agreement with numerical simulation results using Synopsys Technology Computer-Aided Design (TCAD). The model provides helpful physical insight for the nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a non-uniform doping profile operating in the subthreshold regime.