Abstract
The extremely low-power and small-area system requirements of nowadays biomedical and internet-of-thing (IoT) applications have increased the demand for always-on, ultra-small voltage reference (VR) generators. Such VRs must consume very low power, generate a stable voltage that is independent of process, supply voltage $(V_{DD})$ and temperature variations, and operate at low V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</inf> . To overcome the limitations of traditional bandgap and sub-bandgap references, several CMOS-only VR architectures have been recently reported. A two-transistor VR (2TVR) has been introduced in [1]. This circuit operates in the subthreshold region, does not require a startup mechanism, and offers a below-0.5V output voltage while consuming picowatt power at room temperature. These compact and near-zero-power features meet well the application requirements mentioned above [1–2]. However, ordinary 2TVRs cannot keep a stable reference voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ref</inf> ) under a fluctuating V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</inf> obtained, for example, from energy harvesting.
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