Abstract
In the present study, the effects of nitrogen incorporation on the transition of a p-type copper oxide semiconductor are investigated. The properties of sputtered copper oxide and nitrogen-incorporated copper oxide are evaluated and compared at various nitrogen gas flow rates. The results indicate that the addition of nitrogen results in an increased optical bandgap, accompanied by significantly reduced tail states compared to pristine copper oxide. In addition, X-ray diffraction and X-ray photoelectron spectroscopy reveal that the incorporation of nitrogen stimulates the transition from copper (II) oxide to copper (I) oxide.
Highlights
(IGZO) have attracted considerable attention for pixel-switching devices in flat-panel displays owing to their relatively high performance and stability compared to amorphous silicon (a-Si) [1,2,3]
Cu 3d and O 2p orbitals are located at nearly the same energy level near the valence band maximum (VBM), and are fully occupied by hybridization
The results indicate that CuON has significantly decreased tail states compared to pristine CuO, as well as increased optical bandgap energy
Summary
Song-Yi Ahn 1 , Kyung Park 2 , Daehwan Choi 3 , Jozeph Park 4, *, Yong Joo Kim 5, *. Biosystems Machinery Engineering, Chungnam National University, Daejeon 34134, Korea. Received: 4 September 2019; Accepted: 27 September 2019; Published: 29 September 2019
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