Abstract
Si-O-C thin films with a low dielectric constant were deposited on a p-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bistrimethylsilylmethane (BTMSM, H 9 C 3 -Si-CH 2 -Si-C 3 H 9 ) and oxygen gas were used as precursor. Hybrid type Si-O-C thin films with organic properties have been generated many pores by annealing. Therefore, the low dielectric behavior of the Si-O-C films can be explained by mean of attractive (electrostatic) and repulsive (steric) forces from inductive effect. The characteristic analysis of Si-O-C thin films was performed by Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The dependence of the bonding structure on thermal annealing was studied.
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