Abstract
The reaction between glass-like carbon (GC) and chlorine trifluoride (ClF 3) gas was investigated with weight measurements, surface analysis, and gas desorption measurements, where the ClF 3 gas is used for the in situ cleaning of tubes in silicon-related fabrication equipment. From Auger electron spectroscopy and X-ray photoelectron spectroscopy measurements, a carbon mono-fluoride, –(CF) n –, film near the surface of GC is considered to be grown onto the GC surface above 400 °C by the chemical reaction with ClF 3, and this thickness of the fluoride film depends on the temperature. The grown fluoride film desorbs by annealing in a vacuum up to 600 °C. Although GC is apparently etched by ClF 3 over 600 °C, the etch rate of GC is much lower than that of SiC and quartz.
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