Abstract
The etching properties of magnetic materials composing the magnetic tunnel junction (MTJ) such as CoPt, MgO, CoFeB, and CoPt/MgO/CoFeB were investigated in DC pulse biased CO/NH3 inductively coupled plasmas (ICPs) and their etch characteristics were compared with those etched by RF CW biased ICPs. The use of DC pulse biased ICPs instead of RF CW biased ICPs improved the etch selectivity of the MTJ materials over W and also decreased the residue on the surface of the etched materials possibly due to the more stable and volatile etch product formation during the DC pulse off time and the enhanced removal of the etch products by mono-energetic ions during the DC pulse on time. When MTJ materials masked with W were etched, more anisotropic etch profile could be also observed when the MTJ materials were etched with the DC pulse biasing of 60% duty percentage compared with those etched with RF CW biasing due to the decreased redeposition of etch products on the sidewall of the etched feature in addition to the enhanced etch selectivity over W.
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