Abstract
Silicon oxycarbide (SiOC) film was etched using a CF₄/C6F12O/O₂ mixed gas plasma through an inductively coupled plasma etcher. Changes in the dielectric constant and surface chemical bonding properties were investigated using ellipsometry and Fourier transform infrared spectroscopy. Plasma diagnosis was carried out using a double Langmuir probe, ultraviolet detector, and residual gas analyzer. The physical and chemical plasma properties of CHF₃ and C6F12O exhibited similar trends. However, the C6F12O mixed plasma exhibited a smaller change in dielectric constant compared to that of a conventional CHF₃ mixed plasma, because of the lower ion density, ion energy flux, and UV intensity and thinner fluorocarbon-based polymer formation. Therefore, the liquefied C6F12O gas can substitute for the existing etching process gas and reduce the change in dielectric constant.
Published Version
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