A study on the electrical properties of fluorine doped direct-patternable SnO 2 thin films

Abstract

Direct-patternable fluorine doped SnO 2 (FTO) thin films were fabricated by a photochemical solution deposition method. The electrical properties and crystallinity of FTO thin films were slightly enhanced relative to undoped SnO 2 films and the improvement of electrical conduction was found to be due to an increase of carrier concentration. Direct-patterning of FTO thin films was performed without using photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated at low cost, and the electrical properties of direct-patternable SnO 2 films can be improved by fluorine doping.