Abstract
This study employs an innovative dynamic switching test system to investigate the dynamic switching characteristics of three p-GaN HEMT devices. The dynamic switching characteristics are different from the previous research on the dynamic resistance characteristics of GaN devices, and the stability of GaN devices can be analyzed from the perspective of switching characteristics. Based on the theory of dynamic changes in threshold opening voltage and capacitance caused by electrical stress, the mechanism of dynamic switching characteristics of GaN HEMT devices is studied and analyzed in detail. The test results have shown that electrical stress induces trap ionization within the device, resulting in fluctuations in electric potential and ultimately leading to alterations in two critical factors of the dynamic switching characteristics of GaN HEMT devices, the parasitic capacitance and the threshold voltage. The dynamic changes in capacitance before and after electrical stress vary among devices, resulting in different dynamic switching characteristics. The test system is capable of extracting the switching waveform for visual comparison and quantitatively calculating the changes in switching parameters before and after electrical stressing. This test provides a prediction for the drift of switch parameters, offering pre-guidance for the robustness of the optimized application scheme.
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