Abstract
In the present study, the ITO films were produced onto plastic film substrate at room temperature by the inclination opposite target type DC magnetron sputtering equipment, in which a metallic indium tin alloy target was used. The effects of oxygen flow rate and bias voltage on the electric resistivity and transparency of the ITO films were discussed. For low electric resifitivity of the ITO films, the electromagnetic shielding effectiveness was studied. The results obtained were as follows: (1) The ITO films produced at room temperature has very smooth surface. (2) The electric resistivity of ITO films deposited at room temperature showed minimum value at the oxygen flow 0.4 sccm. (3) The electric resistivity of ITO films deposited at room temperature depended on the bias voltage and showed the minimum value in the bias voltage of -70V. (4) When the optimum coating conditions were selected, the electric resistivity of 3.l2 × l0-4Ω·cm was obtained. (5) When the bias voltage was -70V, the ITO films deposited at room temperature showed the most electromagnetic shielding effectiveness.
Published Version
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