Abstract
This study investigated the crystalline orientation and electromechanical characteristics of PZT films fabricated with various concentrations of sol-gel solution, and dopants such as Nb and Zn. Crack-free and 1-μm-thick films with a pure perovskite phase were obtained on Pt/Ti/SiO2/Si by modified sol-gel deposition method. The degree of (111) orientation was promoted by a higher concentration of a sol-gel solution. Excellent electromechanical characteristics were measured in PZN-PZT films. The highest remnant polarization and d33 piezoelectric coefficient were 25.1 μC/cm2 and 240 pC/N, respectively. The sol-gel driven PZN-PZT films could be attractive for application to piezoelectrically operated microelectronic devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
