Abstract
Nitrogen-doped thiophene plasma polymer [N-ThioPP] thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Thiophene was used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, nitrogen gas [N2] was used as nitrogen dopant. Furthermore, additional argon was used as a carrier gas. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, and water contact angle measurement. The ellipsometry results showed the refractive index change of the N-ThioPP film. The FT-IR spectra showed that the N-ThioPP films were completely fragmented and polymerized from thiophene.
Highlights
The existing semiconductor technology lets a silicone material make integrations by a top-down form developed by nano- or molecule technology merged with nanotechnology, biotechniques, and information technology and by a bottom-up method to constitute a device and a circuit with self-alignment of atoms and molecules
Increasing the N2 flow rate during the PECVD led to an increase in the nitrogen doping amounts and nitrogen species binding in the ThioPP thin film
N-ThioPP thin films were deposited on Si(100) by the PECVD method
Summary
The existing semiconductor technology lets a silicone material make integrations by a top-down form developed by nano- or molecule technology merged with nanotechnology, biotechniques, and information technology and by a bottom-up method to constitute a device and a circuit with self-alignment of atoms and molecules. Those are common opinions of a majority of experts. The chemical bonding type of plasma polymer thin films was investigated by FT-IR spectroscopy (Vertex 70, Bruker Optik Gmbh, Ettlingen, Germany). Transmittance and bandgap energy of the N-ThioPP thin film were investigated by a UV-Vis spectrophotometer (Optizen 2120UV Plus, Mecasys Co., Ltd., Yuseong-gu, Daejeon, South Korea)
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