Abstract
In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon. However, for many companies, it is hard to produce 400mm or 450mm wafers, because of excesive funds for exchange the equipments. Therefore, it is necessary to investigate 300mm wafer to obtain a better efficiency and a good property rate. Wafer final Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This research investigated the surface characteristics and optimum condition of applied pressure, polishing speed and slurry-mixed ratio to achieve the optimum condition of wafer final polishing by Taguchi method. By using optimum condition, it helps to achive an ultra precision mirror like surface.
Published Version
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