Abstract
The polishing is one of the important methods in manufacturing of silicon wafer and in thinning of completed device wafer. Generally, getting a flat surface such as a mirror is the purpose of the process. The wafer surface roughness is affected by many variables such as the characteristics of the carrier head unit, operation, speed, the pad and slurry temperature. Optimum process conditions for experimental temperature, down-force, slurry ratio are investigated, time is used as a fixed factor. This study will report the evaluation on surface of wafer by dependent of varying platen, chuck rpm, temperature variation, and oscillation which affect it has on the surface roughness. In this experiment, it is determined the optimum condition for polishing silicon wafers. By using optimum condition, it helps to achieve an ultra precision mirror like surface.
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