Abstract
Nano-artifact metrics (NAM) is an information security technology that uses a nano-scale random structure as a unique identifier, and is expected to provide secure authentication in the Internet of Things era. For electrical discrimination of the two-dimensional random nanostructure in terms of NAM, we investigated the sensitivity to the nanostructure in a Si MOSFET with micrometer channel length in a simulation and experiment. The device simulation showed that the sensitivity was increased by decreasing the channel length and increasing the height of the nano-convex structures. It also showed that a device with a 10 μm channel length could detect a nano-convex. On the other hand, the fabricated Si MOSFET with a 50 nm height nano-convex showed lower nanostructure sensitivity than that expected in the simulation. A detailed analysis indicated that the degradation of the sensitivity was attributed to fabrication process issues, including the unintentional reduction of the convex size and high source and drain resistance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
