Abstract
AbstractThe selective etching process for elevated self‐aligned silicide (salicide) utilizing PtSi has been investigated. We have developed a novel selective etching process utilizing dilute aqua regia followed by etching with dilute HF. It was found that the residual Pt‐rich silicide layers on the sidewall were successfully removed. We also investigated work function modulation of PtSi alloyed with Hf. The barrier height for electrons of PtSi was reduced approximately 0.1 eV for PtxHf1‐xSi formed by the silicidation of Pt (17 nm)/Hf (4 nm)/Si (100) stacked layer structures. © 2010 Wiley Periodicals, Inc. Electron Comm Jpn, 93(8): 32–37, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecj.10215
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