Abstract
The chlorophyll-a (Chl-a) thin film has been formed on the n-Si substrate using a spin-coater. The electrical properties of the Au/Chl-a/n-Si/Al structure have been examined with the data obtained from the current–voltage (I–V) measurements in the dark and under illumination at room temperature. The ideality factor (n) and barrier height (Φb) values have been calculated as 1.24 and 0.799 eV in the dark and 1.08 and 0.824 eV in daylight at room temperature. Also, I–V measurements were taken under different illuminations, and some photoelectrical parameters of the Au/Chl-a/n-Si/Al structure, such as photocurrent, photosensitivity, and Ion/Ioff, were investigated. The results show that the Chl-a thin film can be utilized to fabricate photodiodes and solar cells.
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