Abstract
The program consistency of high density gate-oxide anti-fuse PROM (programmable read only memory) memory cell is considered in this paper. To solve this problem, we do research on the mechanism and models of gate-oxide break down. A test chip based on 2T memory cell is also designed for the experiment. During the test, we have found that the program consistency of 2T cell is really pessimistic. What’s more, the program voltage has effect on the consistency. Through research and test, we have got the optimal program voltage-6.5V for 2T memory cell in 180nm technology. To further improve the consistency, we modify the 2T memory cell and propose a 3T memory cell. It consumes 18% more area, but the standard deviation of equivalent resistance decreases 15.3% in the worst situation. The deviation can decrease 80.3% at most. The program consistency is greatly improved.
Highlights
Anti fuse is a very significant kind of programmable interconnected cell
According to the results above, we have found that if the threat of high voltage can be resolved, the 2T cell is a very suitable choice for high density PROM
The 3T cell consumes 18% more area.15.3% is the worst case
Summary
Anti fuse is a very significant kind of programmable interconnected cell. The semiconductor device based on anti fuse has very advanced performance in the following aspects(1)Non volatile cell(2)radiation hardened cell (3)high reliability (4) confidentiality(5)100% testability (6)small area, high velocity and low power consumption [1]-[3]. Compared with ONO and α-Si anti fuse, gate oxide anti fuse has its particular advantage: it is entirely compatible with the standard CMOS technology This advantage makes the cost decreased greatly. The cell which is not programmed may be fused due to high current during the read motion These problems make poor reliability of e-fuse PROM. Gate-oxide anti fuse is a good choice for PROM memory cell. Compared with e-fuse memory cell, gateoxide anti fuse memory cell improves a lot in reliability, anti-radiation performance and confidentiality. The program consistency of gateoxide anti fuse memory cell is awaiting for improve . We have built a model for the programmed memory cell equivalent resistance With this model, we assess the program consistency, read speed and subthreshold current of 2T memory cell. This structure consumes 18% more areas but it can improve the program consistency greatly
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