A Study on 3C-SiC Carbonization on Misoriented Si Substrates: From Research to Production Scale Reactors

Abstract

In this work we have studied the carbonization of 3C-SiC on misoriented Si substrates, using different thermal ramp rates and shapes. We observed that the heating rate (°C/sec) from carbonization temperature to film growth temperature plays a major role in controlling the void density. Moreover, void formation can be eliminated by the introduction of silane at different temperatures during the heating ramp. The studies were performed on a small research reactor and the results were successfully transferred to a production scale reactor, aimed to the production of 3C-SiC power devices manufactured on 100 and 150 mm Si substrates.