Abstract
In 0.82Ga 0.18As was grown by LP-MOCVD on InP substrates with the two-step growth technique. It was analyzed that epilayer's growth temperature affected on the crystalline quality, surface morphology, carrier concentration, and mobility of the In 0.82Ga 0.18As, which was characterized by X-ray diffraction, scanning electron microscopy, and Hall measurements. The evaluation of stress in In 0.82Ga 0.18As was made from frequency shift of the GaAs-like LO phonon of the Raman spectrum.
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