A study of trap depth parameters and photo response parameters of tin diselenide (SnSe2) crystal

Abstract

Tin diselenide (SnSe2) layered crystals have been grown by a direct vapor transport technique. SnSe2 is an anisotropic binary-layered material would see capable for highly potential applications. The stoichiometric proportion of constituent elements and structure of grown crystals have been accomplished by EDAX spectrum and powder X-ray diffraction analysis respectively. The X-ray diffraction practices of grown crystal revealed the type of structure and micro structural parameters of grown crystals. The Photo conducting responsivity (R*) = 21.7, 24.1, 24.9, 25.1 mA/W, specific detectivity (D) = 5.44 × 108, 6.05 × 108, 6.23 × 108, 6.30 × 108 jones and external quantum efficiency (EQE) = 4.087 %, 4.541 %, 4.678 %, 4.730 % are evaluated at illumination intensities 50 mW/cm2, 75 mW/cm2, 100 mW/cm2 and 125 mW/cm2 for photo-response characterization respectively. The trapdepth parameters of the SnSe2 crystals are explicated on the basis of defect controlled photoconductivity mechanism. The trap depth energies 550 meV, 551 meV, 542 meV and 538 meV are evaluated at illumination intensities 50 mW/cm2, 75 mW/cm2, 100 mW/cm2 and 125 mW/cm2 respectively. The investigational results confirm that the tin diselenide (SnSe2) layered crystals are accomplished for solar cell and photo-detection applications.