Abstract
We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 m pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to protons cm−2 and protons cm−2 respectively. We observe the sum of mean drift paths for electrons and holes for both poly-crystalline CVD diamond and single-crystalline CVD diamond decreases with irradiation fluence from its initial value according to a simple damage curve characterized by a damage constant for each irradiation energy and the irradiation fluence. We find for each irradiation energy the damage constant, for poly-crystalline CVD diamond to be the same within statistical errors as the damage constant for single-crystalline CVD diamond. We find the damage constant for diamond irradiated with 24 GeV protons to be and the damage constant for diamond irradiated with 800 MeV protons to be . Moreover, we observe the pulse height decreases with fluence for poly-crystalline CVD material and within statistical errors does not change with fluence for single-crystalline CVD material for both 24 GeV proton irradiation and 800 MeV proton irradiation. Finally, we have measured the uniformity of each sample as a function of fluence and observed that for poly-crystalline CVD diamond the samples become more uniform with fluence while for single-crystalline CVD diamond the uniformity does not change with fluence.
Highlights
Radiation tolerance, to varying degrees, is required for most modern experiments in accelerator physics, high energy physics, nuclear physics, synchrotron x-ray physics and space physics
The initial non-uniformities in unirradiated pCVD material are mainly due to the interior crystal structure where single grains have different charge collection properties causing a spatial dependence of the Landau-like distributions in the material
We present the results of our studies of pCVD and single-crystalline CVD (scCVD) diamond material both before and after a series of proton irradiations with 800 MeV and 24 GeV particles
Summary
To varying degrees, is required for most modern experiments in accelerator physics, high energy physics, nuclear physics, synchrotron x-ray physics and space physics. For future experiments at CERN, it is expected that the innermost detectors will accumulate an order of magnitude larger fluence [3, 4] This trend of increasing required radiation tolerance is common in areas where sources and beams are developed with higher energy or higher intensity to. In beam monitoring systems, where cooling is difficult and radiation levels are high, diamond use has already superseded silicon use In this area CVD diamond based beam condition monitors are (or were) in use in BaBar [13,14,15], CDF [16, 17], ATLAS [18, 19], CMS [20, 21] and LHCb [22]. The new measurement of the damage constant we have performed for diamond irradiated with 24 GeV protons and 800 MeV protons is the most precise to date by the RD42 collaboration. We have measured the uniformity of each sample as a function of fluence and observe that for pCVD diamond the samples become more uniform with fluence while for scCVD diamond the uniformity does not change with fluence
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