Abstract
The optoelectronic and structural properties of a-Si:F:H films prepared by the RF glow discharge decomposition of mixtures of silicon tetrafluoride and hydrogen have been studied as a function of the deposition parameters, viz. the hydrogen concentration in the gas mixture, the RF power density and the substrate temperature. It has been found that the deposition parameters can be optimised to prepare photosensitive fluorinated material having a band gap of ∼1.65 eV. The photoinduced changes in the properties are quite small. Under suitable deposition conditions highly conducting (σ d = 10 −3 S cm −1) filmscan also be produced.
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