Abstract
This paper reports on evaluation of measurements of reflectivity on III–V semiconductors GaAs for a broad spectral range. The measurements were made using both a classical source (from 4 to 13 eV) and synchrotron radiation from the VEPP-2M storage ring (from 14 to 26 eV). The method of evaluation is based on a fit of the relative reflectivities as obtained from Fresnel formulas to the measured data for 10 discrete angles of incidence. In the range form 19 to 26 eV, where the optical transitions from atomic 3d-states of Ga to the conduction band of GaAs are predominant, the experimental results were compared with pseudopotential calculations. A good qualitative agreement with the experimental data was found.
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