A study of the interfacial layer of Al and Al(1% Si)Si contacts using a zero-layer ellipsometry model

Abstract

In this work, the interfacial layer of the AlSi and Al(1% Si)Si contacting system annealed at different temperatures have been studied using ellipsometry incorporated with a zero-layer model. The results show that the thickness of the interfacial P + layer between Al or Al(1% Si) and the Si-substrate increases with the annealing temperature and the thickness of the P +-layer of the Al(1% Si)Si system is generally lower than that of the AlSi system. Also, the fraction of Al in the interfacial layer decreases with the annealing temperature for the AlSi system, but increases for the Al(1% Si)Si system. The electrical measurements show that the interface of the Al(1% Si)Si contact is more stable than that of the AlSi contact.