Abstract
Deep level transient spectroscopy (DLTS) and quasistatic CV measurements were used for the study of the interface states of thin SiO2 and SiOxNy layers of 6–9 nm thickness, grown by rapid thermal processing in O2 or N2O ambient. DLTS was applied either in the saturating pulse or in the small pulse (energy resolved) mode. From an Arrhenius evaluation of the peaks obtained by temperature-scan measurements with small pulse excitation we derived the distribution of the capture cross section σn in the upper half of the gap, which exhibits a drastic decrease towards the conduction band edge.
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