Abstract
Electrical characteristics of high quality aluminum oxide thin films deposited by the spray pyrolysis technique on GaAs substrates are reported. The films were deposited using a spraying solution of aluminum acetylacetonate in N,N-dimethylformamide and an ultrasonic mist generator. The substrates were (100) GaAs wafers Si-doped (1018 cm -3). The substrate temperature during deposition was in the range of 300–600°C. The electrical characteristics of these films were determined by capacitance and current versus voltage measurements by the incorporation of these films into metal-oxide-semiconductor structures. The interface state density resulted in the order of 1012 1/ eV-cm 2 and the films can stand electric fields higher than 5 MV/cm, without observing a destructive dielectric breakdown. The refractive index, measured by ellipsometry at 633 nm, resulted close to 1.64. The determination of the chemical composition of the films was achieved by energy dispersive X-ray spectroscopy; it resulted close to that of stoichiometric aluminum oxide (O/Al = 1.5) when films are deposited at substrate temperatures of 300–350°C.
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