Abstract
We have studied the electrical characteristics of the nanoscale Si/strained SiGe P channel MOSFET. The heterostructure employed in this structure induces compressive strain in the SiGe layer and causes hole confinement in the SiGe channel away from the SiO2/Si interface. As a result hole mobility improves. As two inversion layers are formed in this device two characteristic threshold voltages are employed to explain its behaviour. We have shown that the difference between these two threshold voltages increase as the Ge mole fraction increases. The effect the Ge mole fraction on drain current, maximum transconductance, gate capacitance and drain-source conductance is investigated.
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