Abstract
Dependence of the chemical composition of a film of plasma-chemical silicon nitride on the technological parameters of the deposition process is studied. The stages in which the process parameters are optimized in order to improve the masking properties of the film are described. A systematic study of the Fourier-transform infra-red (IR) spectra of plasma-chemical silicon-nitride films is carried out. It is found that the chemical resistance of a silicon-nitride film depends on the configuration in which hydrogen is incorporated into chemical bonds.
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