Abstract
Experimental investigations have been carried out to study the dependence of the amplifier characteristics on the size (ie on the cap diameter and cap height) of the resonant-cap cavity for reflection-type IMPATT amplifiers operating in X-band. It is observed that the cap diameter strongly affects the centre frequency of the amplifier but the gain and bandwidth of the amplifier changes very little with the variation of cap diameter. The cap height is found to exhibit a fairly strong effect on the gain of the amplifier and the variation of cap height also appreciably changes the centre frequency of the amplifier. The studies on the effect of different cap height and cap diameter (h-D) combination on amplifier performance have shown that the (h-D) combination required for the optimum amplifier performance is considerably different when compared with the (h-D) combination required for the optimum oscillator performance using the same IMPATT diode. It is found that the cap height required for optimum amplifie...
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