Abstract
The adsorption processes of tellurium and arsenic on Si {113} has been studied using ex-situ spectroscopic ellipsometry (SE), reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). It was established that tellurium did not form a continuous adlayer and can exist on the silicon surface only as islands and only for temperatures not higher than 450°C.
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